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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU208A DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *For use in horizontal deflection output stages for color TV receivers. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 7.5 0.1 2.5 150 115 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1. 0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency Storage time Fall time CONDITIONS IC=0.1A; IB=0;L=25mH IE=10mA; IC=0 IC=4.5 A;IB=2 A IC=4.5 A;IB=2 A VCE=1500V;VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=15V 8 2.25 MIN 700 5 BU208A SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 COB fT ts tf TYP. MAX UNIT V V 1.0 1.5 1.0 0.1 V V mA mA 125 7 10 0.7 pF MHz s s IC=4.5A ;IB=1.8A LB=10H 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU208A Fig.2 Outline dimensions 3 |
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